SWIR InGaAs sensor at 7.5µm pitch

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New Imaging Technologies (NIT) is pleased to announce its first commercially available SWIR InGaAs component with a pitch of 7.5µm, resulting from several years of R&D developing in-house an innovative hybridization process.

This process, which does not use the classical indium bumps technique, allows manufacturing hybrid sensors with very small pitches with high yield at a reduced cost.

The first available component at 7.5µm pitch is a line array with the following characteristics:

• Pixel Number: 2048
• Pitch: 7.5µm
• Line speed: 60KHz @ full line
• Well Fill: 25 Ke-
• Read out Noise: <70e-
• Dark Current: 8 fA @ 15°C

Paweł Malinowski, program manager at Imec

15 December 2021

Image: Martial Red/shutterstock.com

20 January 2022

Paweł Malinowski, program manager at Imec

15 December 2021

Images taken with STMicroelectronics' 940nm NIR Quantum Film sensor (top left) and with its 1,400nm SWIR QF sensor (bottom left). Corresponding images taken using a visible smartphone camera (right). The QF NIR image shows better contrast between black electrical wires hidden in the dark green leaves, and tree trunks and branches hidden in front of the dark wood fence. The SWIR QF image shows how effective it is to use SWIR imaging to see through a silicon wafer. Credit: STMicroelectronics

15 December 2021

Image: Valery Lisin/shutterstock.com

28 October 2021