SWIR InGaAs sensor at 7.5µm pitch
17 January 2020
New Imaging Technologies (NIT) is pleased to announce its first commercially available SWIR InGaAs component with a pitch of 7.5µm, resulting from several years of R&D developing in-house an innovative hybridization process.
This process, which does not use the classical indium bumps technique, allows manufacturing hybrid sensors with very small pitches with high yield at a reduced cost.
The first available component at 7.5µm pitch is a line array with the following characteristics:
• Pixel Number: 2048
• Pitch: 7.5µm
• Line speed: 60KHz @ full line
• Well Fill: 25 Ke-
• Read out Noise: <70e-
• Dark Current: 8 fA @ 15°C
