OD-110W IR emitter
Opto Diode, a division of ITW, and a member of the ITW Photonics Group, has introduced the OD-110W, the second product in the super-high-power series of gallium aluminium arsenide (GaAlAs) infrared (IR) emitters. Featuring a very uniform optical beam, the device is designed especially for military imaging applications.
The OD-110W features four wire bonds on die corners and a hermetically-sealed, three-lead, standard TO-39 package with all surfaces gold-plated for added durability. The total power output is typically 140mW (minimum 80mW), with peak emission wavelength at 850nm.
Power dissipation is 1,000mW at absolute maximum ratings of 25°C (case) with a continuous forward current of 500mA. The peak forward current is 1.5A and the reverse voltage is 5V. The lead soldering temperature is at 260°C, making the IR emitter reliable in extreme temperatures, from -40°C to 100°C. The OD-110W is ideal for systems using night vision (NV) imaging technology, such as NV goggles and/or cameras, or for integration into markers and illuminators.