Progress in improved CMOS sensors

Share this on social media:

At this week’s VLSI Symposium, IMEC will present significant progress in the manufacturability of FinFETs – devices used to improve CMOS reliability.

They address short-channel effects and leakage issues when scaling CMOS towards the 32nm node and beyond. IMEC has improved its process to yield reproducible FinFETs with fin widths down to 5nm and high aspect ratio using 193nm immersion lithography and dry etching. By using these ultra-thin body devices, the need of channel doping is eliminated. This results in reduced parametric spread due to dopant fluctuations together with reduced junction leakage.

Recent News

18 February 2021

Researchers in Southampton, UK and San Francisco have developed a lidar sensor that could pave the way for low-cost, high-performance 3D imaging

10 February 2021

The firm's Lacera technology delivers greater than 90 per cent quantum efficiency and low noise architecture with up to 18-bit readout

09 February 2021

French firm New Imaging Technologies has joined the effort to produce SWIR image sensors with smaller pixels

25 January 2021

It is hoped the photometric stereo imaging approach could open up new ways for robots to sense their environment